All Transistors. BLY88C Datasheet

 

BLY88C Datasheet and Replacement


   Type Designator: BLY88C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 17 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 700 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO61
 

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BLY88C Datasheet (PDF)

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BLY88C

DISCRETE SEMICONDUCTORSDATA SHEETBLY88CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY88CIt has a 3/8" capstan envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the stud.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.f

Datasheet: BLY84 , BLY85 , BLY86 , BLY87 , BLY87A , BLY87C , BLY88 , BLY88A , BD777 , BLY88T , BLY89 , BLY89A , BLY89C , BLY90 , BLY91 , BLY91A , BLY91C .

History: 2SA2154CT | HP122 | MA100 | 2N5827 | RN4983AFS | HEP31A | MRF817

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