BLY93C Specs and Replacement

Type Designator: BLY93C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 36 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Collector Capacitance (Cc): 90 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: M164

 BLY93C Substitution

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BLY93C datasheet

 9.1. Size:269K  hgsemi

 bly93h.pdf pdf_icon

BLY93C

HG RF POWER TRANSISTOR BLY93H Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L STUD The HG BLY93H is Designed for .112x45 A Class C, 28 V High Band Applications up to 175 MHz. C B E C E E FEATURES C E B Common Emitter B PG = 9.0 dB at 25 W/175 MHz I D H Omnigold Metalization System J G MAXIMUM RATINGS ... See More ⇒

Detailed specifications: BLY91, BLY91A, BLY91C, BLY92, BLY92A, BLY92C, BLY93, BLY93A, BC548, BLY94, BLY95, BLY96, BLY97, BLY98, BLY99, BN7133, BP15-12

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