BLY93C Datasheet, Equivalent, Cross Reference Search
Type Designator: BLY93C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M164
BLY93C Transistor Equivalent Substitute - Cross-Reference Search
BLY93C Datasheet (PDF)
9.1. Size:269K hgsemi
bly93h.pdf
bly93h.pdf
HG RF POWER TRANSISTORBLY93HSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .380 4L STUD The HG BLY93H is Designed for .112x45 AClass C, 28 V High Band Applications up to 175 MHz. CBE CE EFEATURES: C EBCommon Emitter BPG = 9.0 dB at 25 W/175 MHz IDHOmnigold Metalization SystemJGMAXIMUM RATINGS
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SD1505
