BSC1015A Specs and Replacement
Type Designator: BSC1015A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 0.02 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: SPECIAL
BSC1015A Substitution
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BSC1015A datasheet
Type BSC100N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 10 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli... See More ⇒
bsc100n10nsf8 bsc100n10nsfg.pdf ![]()
% ! !% D # A0 D Q ' 381>>5?B=1... See More ⇒
BSC100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS... See More ⇒
bsc105n10lsf9 bsc105n10lsfg.pdf ![]()
& " & E $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1 D R ( 492??6= =@8 4 =6G6= 1 m D n) m x R /6CJ =@H 82E6 492C86 I AC@5F4E ) ' D n) D R /6CJ =@H @? C6D DE2?46 D n) G D ON R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @"- 4@>A= 2?E "2=@86? C66 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @? R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?49C@?@FD C64E... See More ⇒
Detailed specifications: BR301B, BR400A, BR400B, BR401A, BR401B, BRT60, BS110, BSC1015, MJE340, BSC1015B, BSC1016, BSC1016A, BSC1016B, BSDP59, BSJ30, BSJ32, BSJ36
Keywords - BSC1015A pdf specs
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