BSP15T1 Specs and Replacement
Type Designator: BSP15T1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23
BSP15T1 Substitution
- BJT ⓘ Cross-Reference Search
BSP15T1 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BSP152 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP152 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNI... See More ⇒
SOT223 PNP SILICON PLANAR BSP15 HIGH VOLTAGE TRANSISTOR ISSUE 3 FEBRUARY 1996 T i V C i I E T T C T I D T I B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I IT DITI II V V I V I II i V V I V I i V V I ... See More ⇒
Detailed specifications: BSJ62, BSJ63, BSJ65, BSJ66, BSJ67, BSJ68, BSJ79, BSP15, 9014, BSP15T3, BSP16, BSP16T1, BSP16T3, BSP19, BSP19AT1, BSP20, BSP20AT1
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