BSP16T1 Datasheet and Replacement
Type Designator: BSP16T1
SMD Transistor Code: BT2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT23
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BSP16T1 Datasheet (PDF)
bsp16t1r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP16T1/DSOT-223 Package BSP16T1Motorola Preferred DeviceHigh Voltage TransistorPNP SiliconCOLLECTOR 2,4SOT223 PACKAGEPNP SILICONHIGH VOLTAGEBASETRANSISTOR1SURFACE MOUNTEMITTER 34MAXIMUM RATINGSRating Symbol Value Unit 123CollectorEmitter Voltage VCEO 300 VdcCollectorBase Voltage
bsp16t1g.pdf
BSP16T1GHigh Voltage TransistorsPNP SiliconFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantPNP SILICONHIGH VOLTAGE TRANSISTORMAXIMUM RATINGSSURFACE MOUNTRating Symbol Value UnitCollector-Emitter Voltage VCEO --300 VdcCollector-Base Voltage VCBO --350 VdcCOLLECTOR 2,4Emitter-Base Voltage VEBO --6.0 VdcCollector C
bsp16t1-d.pdf
BSP16T1GHigh Voltage TransistorsPNP SiliconFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantPNP SILICONHIGH VOLTAGE TRANSISTORMAXIMUM RATINGSSURFACE MOUNTRating Symbol Value UnitCollector-Emitter Voltage VCEO --300 VdcCollector-Base Voltage VCBO --350 VdcCOLLECTOR 2,4Emitter-Base Voltage VEBO --6.0 VdcCollector C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2043 | 2SD797 | BT2944 | CTP3551 | 2N5811 | 2N5786 | 2SA896-2
Keywords - BSP16T1 transistor datasheet
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History: 2N2043 | 2SD797 | BT2944 | CTP3551 | 2N5811 | 2N5786 | 2SA896-2
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