BSR18 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSR18
SMD Transistor Code: T9_T9p
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23
BSR18 Transistor Equivalent Substitute - Cross-Reference Search
BSR18 Datasheet (PDF)
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bsr18a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSR18APNP switching transistor1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistor BSR18AFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emi
bsr18a.pdf
BSR18ACESOT-23BMark: T92PNP General Purpose AmplifierThis device is designed as a general purpose amplifier andswitching applications at collector currents of 10 A to 100mA. Sourced from Process 66.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 V 3VEBO Emitter-
bsr18a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BSR18ASILICON LOWPOWER SWITCHING TRANSISTORSPNP silicon transistorMarkingBSR18A = T92Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 40 VCollectoremitter vol
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
