All Transistors. BSR18AR Datasheet

 

BSR18AR Datasheet and Replacement


   Type Designator: BSR18AR
   SMD Transistor Code: T93
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
 

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BSR18AR Datasheet (PDF)

 8.1. Size:53K  philips
 bsr18a.pdf pdf_icon

BSR18AR

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSR18APNP switching transistor1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistor BSR18AFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emi

 8.2. Size:74K  fairchild semi
 bsr18a.pdf pdf_icon

BSR18AR

BSR18ACESOT-23BMark: T92PNP General Purpose AmplifierThis device is designed as a general purpose amplifier andswitching applications at collector currents of 10 A to 100mA. Sourced from Process 66.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 V 3VEBO Emitter-

 8.3. Size:144K  cdil
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BSR18AR

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BSR18ASILICON LOWPOWER SWITCHING TRANSISTORSPNP silicon transistorMarkingBSR18A = T92Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 40 VCollectoremitter vol

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History: 2N6514 | BD232G

Keywords - BSR18AR transistor datasheet

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