BSS11 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BSS11 Specs and Replacement

Type Designator: BSS11

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO18

BSS11 Substitution

- BJT ⓘ Cross-Reference Search

BSS11 datasheet

0.1. Size:76K philips

bss110 1.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor 1995 Apr 07 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode BSS110 vertical D-MOS transistor FEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. Hi... See More ⇒

0.2. Size:76K philips

bss110.pdf pdf_icon

0.3. Size:90K infineon

bss119.pdf pdf_icon

BSS 119 SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.6 ...2.6 V Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6 SOT-23 sSH Type Ordering Code Tape and Reel Information BSS 119 Q67000-S007 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS = ... See More ⇒

0.4. Size:619K infineon

bss119n.pdf pdf_icon

BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS 100 V N-channel RDS(on),max VGS=10 V 6 W Enhancement mode VGS=4.5 V 10 Logic level (4.5V rated) ID 0.19 A Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant; Halogen free 3 1 2 Type Package Tape and Reel Information Marking Halogen fre... See More ⇒