BSS15 Specs and Replacement
Type Designator: BSS15
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO39
BSS15 Substitution
- BJT ⓘ Cross-Reference Search
BSS15 datasheet
BSS159N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 8 DS(on),max Depletion mode I 0.13 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating; RoHS compliant SOT-23 Type Package Pb-free Tape and Reel Information Marking BSS159 PG-SOT-23 Yes L6327 3000 pcs/reel SGs BSS159 PG-SOT-23 Yes... See More ⇒
Preliminary Data BSS 159 SIPMOS Small-Signal Transistor N channel Depletion mode High dynamic resistance Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking Ordering Code BSS 159 50 V 0.16 A 8 SOT-23 SEs Q67000-S321 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 50 V V Drain-gate voltage DGR RGS = 20 k 50 Gate source voltage ... See More ⇒
Detailed specifications: BSR60, BSR61, BSR62, BSS10, BSS11, BSS12, BSS13, BSS14, BC327, BSS16, BSS17, BSS18, BSS19, BSS20, BSS21, BSS22, BSS23
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