BSS41 PDF and Equivalents Search

 

BSS41 Specs and Replacement

Type Designator: BSS41

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

 BSS41 Substitution

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BSS41 datasheet

 0.1. Size:207K  philips

pbss4160ds.pdf pdf_icon

BSS41

PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 04 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement PBSS5160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High ... See More ⇒

 0.2. Size:258K  philips

pbss4140t.pdf pdf_icon

BSS41

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet 2005 Feb 24 Supersedes data of 2005 Feb 14 NXP Semiconductors Product data sheet 40 V, 1A PBSS4140T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capabilities. VCEO ... See More ⇒

 0.3. Size:244K  philips

pbss4120t.pdf pdf_icon

BSS41

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4120T 20 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 20 V, 1 A PBSS4120T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC... See More ⇒

 0.4. Size:49K  philips

pbss4130t.pdf pdf_icon

BSS41

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Nov 27 Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and I... See More ⇒

Detailed specifications: BSS33, BSS34, BSS35, BSS36, BSS37, BSS38, BSS39, BSS40, A1013, BSS42, BSS43, BSS44, BSS45, BSS46, BSS47, BSS48, BSS49

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