BSS54B Specs and Replacement
Type Designator: BSS54B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO5
BSS54B Substitution
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BSS54B datasheet
PBSS5440D 40 V PNP low VCEsat (BISS) transistor Rev. 02 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement PBSS4440D. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector curr... See More ⇒
PBSS5420D 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 29 September 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4420D. 1.2 Features Very low collector-emitter saturation resistance Ultra low collect... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product specification 2004 Nov 08 Supersedes data of 2004 Jun 8 Philips Semiconductors Product specification 80 V, 4 A PBSS5480X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operation SYMBOL PARAMETER MAX. UNI... See More ⇒
Detailed specifications: BSS50, BSS51, BSS52, BSS53, BSS53A, BSS53B, BSS54, BSS54A, BC556, BSS55, BSS55A, BSS55B, BSS56, BSS59, BSS60, BSS61, BSS62
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