BSS54B Datasheet, Equivalent, Cross Reference Search
Type Designator: BSS54B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO5
BSS54B Transistor Equivalent Substitute - Cross-Reference Search
BSS54B Datasheet (PDF)
pbss5440d.pdf
PBSS5440D40 V PNP low VCEsat (BISS) transistorRev. 02 14 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.NPN complement: PBSS4440D.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector curr
pbss5420d.pdf
PBSS5420D20 V, 4 A PNP low VCEsat (BISS) transistorRev. 02 29 September 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4420D.1.2 Features Very low collector-emitter saturation resistance Ultra low collect
pbss5480x.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS5480X80 V, 4 APNP low VCEsat (BISS) transistorProduct specification 2004 Nov 08Supersedes data of 2004 Jun 8Philips Semiconductors Product specification80 V, 4 APBSS5480XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNI
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
