BSS61 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSS61
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO39
BSS61 Transistor Equivalent Substitute - Cross-Reference Search
BSS61 Datasheet (PDF)
bss61 bss62 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSS61; BSS62PNP Darlington transistors1997 May 14Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP Darlington transistors BSS61; BSS62FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emitter I
bss60a bss61a bss62a.pdf
NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORSThey are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
