BSS61 Specs and Replacement
Type Designator: BSS61
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4000
Package: TO39
BSS61 Substitution
- BJT ⓘ Cross-Reference Search
BSS61 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS61; BSS62 PNP Darlington transistors 1997 May 14 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP Darlington transistors BSS61; BSS62 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 emitter I... See More ⇒
NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu... See More ⇒
Detailed specifications: BSS54A, BSS54B, BSS55, BSS55A, BSS55B, BSS56, BSS59, BSS60, MPSA42, BSS62, BSS63, BSS63L, BSS64, BSS64R, BSS65, BSS65R, BSS66
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