All Transistors. BSS61 Datasheet

 

BSS61 Datasheet and Replacement


   Type Designator: BSS61
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO39
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BSS61 Datasheet (PDF)

 ..1. Size:52K  philips
 bss61 bss62 cnv 2.pdf pdf_icon

BSS61

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSS61; BSS62PNP Darlington transistors1997 May 14Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP Darlington transistors BSS61; BSS62FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emitter I

 0.1. Size:62K  comset
 bss60a bss61a bss62a.pdf pdf_icon

BSS61

NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORSThey are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2134 | STC9014D | 2SA1391R | NSS1C301E | 2SC3509 | HSE830 | OC81DM

Keywords - BSS61 transistor datasheet

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