BSS79 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSS79
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO236
BSS79 Transistor Equivalent Substitute - Cross-Reference Search
BSS79 Datasheet (PDF)
bss79 bss81.pdf
NPN Silicon Switching Transistors BSS 79BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types: BSS 80, BSS 82 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BSS 79 B CEs Q62702-S503 B E C SOT-23BSS 79 C CFs Q62702-S501BSS 81 B CDs Q62702-S555BSS 81 C CGs Q62702-S605Maximum RatingsParameter Symbol Values
bss79c.pdf
BSS79CNPN General Purpose Amplifier This device is for use as a medium power amplifier and swith requiring Ccollector currents up to 500mA. Sourced from process 19. See BCW65C for characteristics.ESOT-23BMark: CFAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage
bss79b.pdf
SOT SI I O A A SS S IT HI T A SISTO SS ISS S T T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I 8 Di i i T T T i T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V I V V I II I V V V V T i I V V II i i V V I I V I V I I i I V VT i I V VT i i V V I T II i 8 V V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
