BSS80B Datasheet, Equivalent, Cross Reference Search
Type Designator: BSS80B
SMD Transistor Code: CH_CHs
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.88 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO236
BSS80B Transistor Equivalent Substitute - Cross-Reference Search
BSS80B Datasheet (PDF)
bss80b.pdf
SOT SI I O A A SS80 S IT HI T A SISTO S SS80 ISS S T T I D T I 8 8 SOT A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I 8 Di i i T T T i T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V I V I II I V V V V T i I V V II i V V I V V i V I V I V V i 8 I V VT i 8 I V VT i
bss80 bss82.pdf
PNP Silicon Switching Transistors BSS 80BSS 82 High DC current gain Low collector-emitter saturation voltage Complementary types: BSS 79, BSS 81 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BSS 80 B CHs Q62702-S557 B E C SOT-23BSS 80 C CJs Q62702-S492BSS 82 B CLs Q62702-S560BSS 82 C CMs Q62702-S482Maximum RatingsParameter Symbol Values
bss806ne.pdf
BSS806NEOptiMOS2 Small-Signal-TransistorProduct Summary FeaturesVDS 20 V N-channelRDS(on),max VGS=2.5 V 57 mW Enhancement modeVGS=1.8 V 82 Ultra Logic level (1.8V rated)ID 2.3 A ESD protected Avalanche rated Qualified according to AEC Q101PG-SOT23 3 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-211 2
bss806n.pdf
BSS806NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 57mDS(on),max GS Enhancement modeV =1.8 V 82GS Ultra Logic level (1.8V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape
bss806n.pdf
Product specificationBSS806NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 57mDS(on),max GS Enhancement modeV =1.8 V 82GS Ultra Logic level (1.8V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-21
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
