BSV10-10 Specs and Replacement
Type Designator: BSV10-10
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Package: TO39
BSV10-10 Substitution
- BJT ⓘ Cross-Reference Search
BSV10-10 datasheet
NO PDF data!
Detailed specifications: BST40, BST50, BST51, BST52, BST60, BST61, BST62, BSV10, B772, BSV10-16, BSV10-6, BSV11, BSV11-16, BSV11-6, BSV12, BSV12-10, BSV12-16
Keywords - BSV10-10 pdf specs
BSV10-10 cross reference
BSV10-10 equivalent finder
BSV10-10 pdf lookup
BSV10-10 substitution
BSV10-10 replacement
