BSV12-10 Specs and Replacement
Type Designator: BSV12-10
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Package: TO39
BSV12-10 Substitution
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BSV12-10 datasheet
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Detailed specifications: BSV10, BSV10-10, BSV10-16, BSV10-6, BSV11, BSV11-16, BSV11-6, BSV12, TIP31, BSV12-16, BSV12-6, BSV15, BSV15-10, BSV15-16, BSV15-6, BSV16, BSV16-10
Keywords - BSV12-10 pdf specs
BSV12-10 cross reference
BSV12-10 equivalent finder
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