All Transistors. 2N3179 Datasheet

 

2N3179 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3179

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO53

2N3179 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3179 Datasheet (PDF)

9.1. 2n3174.pdf Size:12K _semelab

2N3179

2N3174Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

9.2. 2n3173.pdf Size:173K _inchange_semiconductor

2N3179
2N3179

isc Silicon PNP Power Transistor 2N3173DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

 9.3. 2n3171.pdf Size:204K _inchange_semiconductor

2N3179
2N3179

isc Silicon PNP Power Transistor 2N3171DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

9.4. 2n3172.pdf Size:173K _inchange_semiconductor

2N3179
2N3179

isc Silicon PNP Power Transistor 2N3172DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

 9.5. 2n3171h.pdf Size:196K _inchange_semiconductor

2N3179
2N3179

isc Silicon PNP Power Transistor 2N3171HDESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications.ABSOLUTE MAXIM

9.6. 2n3174.pdf Size:173K _inchange_semiconductor

2N3179
2N3179

isc Silicon PNP Power Transistor 2N3174DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

Datasheet: 2N3171 , 2N3172 , 2N3173 , 2N3174 , 2N3175 , 2N3176 , 2N3177 , 2N3178 , D882 , 2N317A , 2N3180 , 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 .

 

 
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