BSX46-10 Specs and Replacement
Type Designator: BSX46-10
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Package: TO39
BSX46-10 Substitution
- BJT ⓘ Cross-Reference Search
BSX46-10 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX45; BSX46; BSX47 NPN medium power transistors 1997 Apr 23 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V)... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BSX45 BSX46 BSX47 UNITS VCEO Collector Emitter Voltage 40 60 80 V VCES Collector Emitter Voltage 80 100 120 V VEBO... See More ⇒
Detailed specifications: BSX40, BSX41, BSX44, BSX45, BSX45-10, BSX45-16, BSX45-6, BSX46, C1815, BSX46-16, BSX46-6, BSX47, BSX47-10, BSX47-16, BSX47-6, BSX48, BSX49
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