BSX50-10 Specs and Replacement
Type Designator: BSX50-10
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Package: TO39
BSX50-10 Substitution
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BSX50-10 datasheet
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Detailed specifications: BSX46-16, BSX46-6, BSX47, BSX47-10, BSX47-16, BSX47-6, BSX48, BSX49, TIP122, BSX50-6, BSX51, BSX51A, BSX51B, BSX52, BSX52A, BSX52B, BSX53
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