2N3199 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3199
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO59
2N3199 Transistor Equivalent Substitute - Cross-Reference Search
2N3199 Datasheet (PDF)
9.1. 2n319 2n320 2n321.pdf 
Size:327K _general_electric
9.2. 2n3196.pdf Size:171K _inchange_semiconductor
isc Silicon PNP Power Transistor 2N3196DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
9.3. 2n3198.pdf Size:171K _inchange_semiconductor
isc Silicon PNP Power Transistor 2N3198DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
9.4. 2n3195.pdf Size:171K _inchange_semiconductor
isc Silicon PNP Power Transistor 2N3195DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2SC4793 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 .
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