BSZ10 Datasheet, Equivalent, Cross Reference Search

   Type Designator: BSZ10
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 0.3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO18

BSZ10 Transistor Equivalent Substitute - Cross-Reference Search

BSZ10 Datasheet (PDF)

0.1. Size:628K infineon
bsz100n03msg.pdf

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0.2. Size:467K infineon
bsz100n06ls3 bsz100n06ls3g.pdf

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0.3. Size:691K infineon
bsz100n06ns.pdf

TypeBSZ100N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 10 mW Superior thermal resistanceID A 40 N-channelQOSS nC 14 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 12 Pb-free lead plating; RoHS compliantPG-TS

0.4. Size:631K infineon
bsz100n03lsg.pdf

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0.5. Size:621K infineon
bsz105n04nsg.pdf