BSZ10 PDF and Equivalents Search

 

BSZ10 Specs and Replacement

Type Designator: BSZ10

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 0.3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO18

 BSZ10 Substitution

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BSZ10 datasheet

 0.1. Size:628K  infineon

bsz100n03msg.pdf pdf_icon

BSZ10

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 0.2. Size:467K  infineon

bsz100n06ls3 bsz100n06ls3g.pdf pdf_icon

BSZ10

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 0.3. Size:691K  infineon

bsz100n06ns.pdf pdf_icon

BSZ10

Type BSZ100N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 10 mW Superior thermal resistance ID A 40 N-channel QOSS nC 14 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 12 Pb-free lead plating; RoHS compliant PG-TS... See More ⇒

 0.4. Size:631K  infineon

bsz100n03lsg.pdf pdf_icon

BSZ10

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Detailed specifications: BSY95, BSY95A, BSYP04, BSYP05, BSYP06, BSYP07, BSYP62, BSYP63, MJE350, BSZ11, BT2483, BT2483T, BT2484, BT2484T, BT2604, BT2604T, BT2605

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