2N3210 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3210

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO18

2N3210 Datasheet (PDF)

5.1. 2n319 2n320 2n321.pdf Size:327K _general_electric

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