2N3210 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3210
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO18
2N3210 Transistor Equivalent Substitute - Cross-Reference Search
2N3210 Datasheet (PDF)
5.1. 2n319 2n320 2n321.pdf 
Size:327K _general_electric
Datasheet: 2N3207 , 2N3208 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , TIP41C , 2N3211 , 2N3212 , 2N3213 , 2N3214 , 2N3215 , 2N3216 , 2N3217 , 2N3218 .
