BU108 Specs and Replacement

Type Designator: BU108

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 115 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO3

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BU108 datasheet

 ..1. Size:206K  inchange semiconductor

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BU108

isc Silicon NPN Power Transistor BU108 DESCRIPTION High Voltage High Switching Speed Collector Current- I = 5A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage CRT scanning applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Collect... See More ⇒

Detailed specifications: BU104, BU104D, BU104DP, BU104P, BU105, BU105-02, BU106, BU107, 2SD2499, BU1085, BU109, BU109D, BU109DP, BU109NP, BU109P, BU110, BU111

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