BU109D Specs and Replacement

Type Designator: BU109D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 330 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3

 BU109D Substitution

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BU109D datasheet

 9.1. Size:235K  cdil

 bu109.pdf pdf_icon

BU109D

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BU109 NPN HIGH VOLTAGE SILICON POWER TRANSISTOR TO-3 Metal Can Package HORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTs ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 150 V VCBO Collector Base Voltage 330 V VEBO ... See More ⇒

 9.2. Size:207K  inchange semiconductor

 bu109.pdf pdf_icon

BU109D

isc Silicon NPN Power Transistor BU109 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 5A CE(sat C Collector-Emitter Sustaining Voltage- V = 150 V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage of TVs and C... See More ⇒

Detailed specifications: BU104P, BU105, BU105-02, BU106, BU107, BU108, BU1085, BU109, 8550, BU109DP, BU109NP, BU109P, BU110, BU111, BU112, BU113, BU113S

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