All Transistors. BU109DP Datasheet

 

BU109DP Datasheet and Replacement


   Type Designator: BU109DP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 330 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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BU109DP Datasheet (PDF)

 9.1. Size:235K  cdil
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BU109DP

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBU109NPN HIGH VOLTAGE SILICON POWER TRANSISTORTO-3Metal Can PackageHORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 150 VVCBOCollector Base Voltage 330 VVEBO

 9.2. Size:207K  inchange semiconductor
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BU109DP

isc Silicon NPN Power Transistor BU109DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CCollector-Emitter Sustaining Voltage-: V = 150 V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of TVs andC

Datasheet: BU105 , BU105-02 , BU106 , BU107 , BU108 , BU1085 , BU109 , BU109D , C3198 , BU109NP , BU109P , BU110 , BU111 , BU112 , BU113 , BU113S , BU114 .

History: 2SA2048 | DCX143EH | 2SA1464-P | FMMT1893 | 2SA1464-Q | RT1P432M | H9012

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