All Transistors. BU210 Datasheet

 

BU210 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU210
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3

 BU210 Transistor Equivalent Substitute - Cross-Reference Search

   

BU210 Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
 bu210.pdf

BU210 BU210

isc Silicon NPN Power Transistor BU210DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 400V (Min)(BR)CBOHigh Current CapabilityHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal output and high power switchingapplications.ABSOLUTE MAXIMUM RATI

Datasheet: BU207 , BU207A , BU208 , BU208A , BU208B , BU208D , BU209 , BU209A , A733 , BU211 , BU212 , BU213 , BU214 , BU215 , BU216 , BU217 , BU218 .

 

 
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