BU2508AF Specs and Replacement

Type Designator: BU2508AF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 90 pF

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: SOT199

 BU2508AF Substitution

- BJT ⓘ Cross-Reference Search

 

BU2508AF datasheet

 ..1. Size:82K  philips

 bu2508af.pdf pdf_icon

BU2508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati... See More ⇒

 ..2. Size:212K  inchange semiconductor

 bu2508af.pdf pdf_icon

BU2508AF

isc Silicon NPN Power Transistor BU2508AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

 7.1. Size:61K  philips

 bu2508aw 1.pdf pdf_icon

BU2508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations result... See More ⇒

 7.2. Size:61K  philips

 bu2508aw.pdf pdf_icon

BU2508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations result... See More ⇒

SHOW MORE

Detailed specifications: BU223, BU223A, BU225, BU226, BU2506DF, BU2506DX, BU2507AF, BU2508A, TIP35C, BU2508AX, BU2508D, BU2508DF, BU2508DX, BU2520A, BU2520AF, BU2520AX, BU2520D

Keywords - BU2508AF pdf specs

 BU2508AF cross reference

 BU2508AF equivalent finder

 BU2508AF pdf lookup

 BU2508AF substitution

 BU2508AF replacement