All Transistors. BU2508AF Datasheet

 

BU2508AF Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU2508AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: SOT199

 BU2508AF Transistor Equivalent Substitute - Cross-Reference Search

   

BU2508AF Datasheet (PDF)

 ..1. Size:82K  philips
bu2508af.pdf

BU2508AF BU2508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati

 ..2. Size:212K  inchange semiconductor
bu2508af.pdf

BU2508AF BU2508AF

isc Silicon NPN Power Transistor BU2508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.1. Size:61K  philips
bu2508aw 1.pdf

BU2508AF BU2508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations result

 7.2. Size:61K  philips
bu2508aw.pdf

BU2508AF BU2508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations result

 7.3. Size:58K  philips
bu2508a 1.pdf

BU2508AF BU2508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations resulti

 7.4. Size:175K  cn sptech
bu2508a.pdf

BU2508AF BU2508AF

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU2508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 VCES BEV Co

 7.5. Size:215K  inchange semiconductor
bu2508aw.pdf

BU2508AF BU2508AF

isc Silicon NPN Power Transistor BU2508AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.6. Size:217K  inchange semiconductor
bu2508ax.pdf

BU2508AF BU2508AF

isc Silicon NPN Power Transistor BU2508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.7. Size:216K  inchange semiconductor
bu2508a.pdf

BU2508AF BU2508AF

isc Silicon NPN Power Transistor BU2508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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