BU2522A Specs and Replacement
Type Designator: BU2522A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 115 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO218
BU2522A Substitution
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BU2522A datasheet
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAM... See More ⇒
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUI... See More ⇒
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Detailed specifications: BU2508DF, BU2508DX, BU2520A, BU2520AF, BU2520AX, BU2520D, BU2520DF, BU2520DX, 9014, BU2522AF, BU2522AX, BU2525A, BU2525AF, BU2525AX, BU2527A, BU2527AF, BU2527AX
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