2N3222 Specs and Replacement
Type Designator: 2N3222
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO61
2N3222 Substitution
- BJT ⓘ Cross-Reference Search
2N3222 datasheet
isc Silicon NPN Power Transistor 2N3226 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% test Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba... See More ⇒
Detailed specifications: 2N3215 , 2N3216 , 2N3217 , 2N3218 , 2N3219 , 2N322 , 2N3220 , 2N3221 , 2SC2655 , 2N3223 , 2N3224 , 2N3225 , 2N3226 , 2N3227 , 2N3229 , 2N323 , 2N3230 .
History: BC510FC
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