BU326A-4 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU326A-4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 62 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BU326A-4 Transistor Equivalent Substitute - Cross-Reference Search
BU326A-4 Datasheet (PDF)
bu326a.pdf
BU326AHIGH VOLTAGE NPN SILICON POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEEDAPPLICATIONS: POWER SUPPLIES LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1 2DESCRIPTION TO-3The BU326A is a silicon multiepitaxial mesa NPNtransistor in Jedec TO-3 metal case particularlyintended for switch-mode CTV supply system.INTERNAL SCHEMATIC D
bu326 bu326a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A DESCRIPTION With TO-3 package High voltage;high speed Low collector saturation voltage. APPLICATIONS Intended for operating in CTV receivers chopper supplies. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector Abs
bu326a.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BU326ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersu
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