BU506 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU506
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO220
BU506 Transistor Equivalent Substitute - Cross-Reference Search
BU506 Datasheet (PDF)
bu506.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU506; BU506DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506; BU506DDESCRIPTIONHigh-voltage, high-speed, switchingNPN power transistor in a TO-220ABpackage. The B
bu506.pdf
isc Silicon NPN Power Transistor BU506DESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
bu506df.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU506F; BU506DFSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506F; BU506DFDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a SOT186package. The B
bu506f.pdf
isc Silicon NPN Power Transistor BU506FDESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
bu506a.pdf
isc Silicon NPN Power Transistor BU506ADESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
bu506df.pdf
isc Silicon NPN Power Transistor BU506DFDESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in Integrated Efficiency DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
bu506d.pdf
isc Silicon NPN Power Transistor BU506DDESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
