BU508AFI Specs and Replacement

Type Designator: BU508AFI

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 34 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO220F

 BU508AFI Substitution

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BU508AFI datasheet

 ..1. Size:245K  st

bu208a bu508a bu508afi.pdf pdf_icon

BU508AFI

BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technolo... See More ⇒

 ..2. Size:78K  utc

bu508afi.pdf pdf_icon

BU508AFI

UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE 2. COLLECTOR 3. EMITTER DESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. 1 2 3 Features * TV color horizontal deflection. * With TO-3P... See More ⇒

 ..3. Size:214K  inchange semiconductor

bu508afi.pdf pdf_icon

BU508AFI

isc Silicon NPN Power Transistor BU508AFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

 7.1. Size:48K  philips

bu508af 2.pdf pdf_icon

BU508AFI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VB... See More ⇒

Detailed specifications: BU505F, BU506, BU506D, BU506DF, BU506F, BU508, BU508A, BU508AF, BC327, BU508AT, BU508AXI, BU508D, BU508DF, BU508DFI, BU508DR, BU508DRF, BU508DXI

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