BU508D PDF and Equivalents Search

 ..1. Size:80K  st

 bu208d bu508d bu508dfi.pdf

BU208D BU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE TO-3 (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE 1 NPN TRANSISTOR WITH INTEGRATED 2 FREEWHEELING DIODE APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV 3 3 DESCRIPTION 2 2 1 1 T... See More ⇒

 ..2. Size:96K  st

 bu208d bu508d.pdf

BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED 1 FREEWHEELING DIODE 2 APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION 3 3 The BU208D, BU508D and BU508DFI are 2 2 ... See More ⇒

 ..3. Size:122K  inchange semiconductor

 bu508d.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508D DESCRIPTION With TO-3PN package High voltage Built-in damper diode APPLICATIONS For use in large screen colour deflection circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maxi... See More ⇒

 0.1. Size:45K  philips

 bu508df.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collec... See More ⇒

 0.2. Size:46K  philips

 bu508dx.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collec... See More ⇒

 0.3. Size:58K  philips

 bu508dw.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter vo... See More ⇒

 0.4. Size:414K  st

 bu508dfi.pdf

BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS 3 HORIZONTAL DEFLECTION FOR COLOUR 2 TV UP TO 25" 1 DESCRIPTION ISOWATT218 The BU508DFI is manufactured using ... See More ⇒

 0.5. Size:228K  comset

 bu508df.pdf

NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value U... See More ⇒

 0.6. Size:42K  inchange semiconductor

 bu508df.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION With TO-3PFa package High voltage,high speed With integrated efficiency diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDIT... See More ⇒

 0.7. Size:217K  inchange semiconductor

 bu508dx.pdf

isc Silicon NPN Power Transistor BU508DX DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect... See More ⇒

 0.8. Size:216K  inchange semiconductor

 bu508dfi.pdf

isc Silicon NPN Power Transistor BU508DFI DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-... See More ⇒

 0.9. Size:214K  inchange semiconductor

 bu508dw.pdf

isc Silicon NPN Power Transistor BU508DW DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect... See More ⇒

 0.10. Size:218K  inchange semiconductor

 bu508dr.pdf

isc Silicon NPN Power Transistor BU508DR DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒