All Transistors. BU508DXI Datasheet

 

BU508DXI Datasheet and Replacement


   Type Designator: BU508DXI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 34 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 125 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: ISOWATT218
 
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BU508DXI Datasheet (PDF)

 7.1. Size:46K  philips
bu508dx.pdf pdf_icon

BU508DXI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec

 7.2. Size:217K  inchange semiconductor
bu508dx.pdf pdf_icon

BU508DXI

isc Silicon NPN Power Transistor BU508DXDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

 8.1. Size:45K  philips
bu508df.pdf pdf_icon

BU508DXI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec

 8.2. Size:58K  philips
bu508dw.pdf pdf_icon

BU508DXI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarilyfor use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter vo

Datasheet: BU508AFI , BU508AT , BU508AXI , BU508D , BU508DF , BU508DFI , BU508DR , BU508DRF , S8550 , BU508FI , BU508L , BU522 , BU522A , BU522B , BU526 , BU526A , BU526A-4 .

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