BU508DXI Specs and Replacement

Type Designator: BU508DXI

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 34 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: ISOWATT218

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BU508DXI datasheet

 7.1. Size:46K  philips

bu508dx.pdf pdf_icon

BU508DXI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collec... See More ⇒

 7.2. Size:217K  inchange semiconductor

bu508dx.pdf pdf_icon

BU508DXI

isc Silicon NPN Power Transistor BU508DX DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect... See More ⇒

 8.1. Size:45K  philips

bu508df.pdf pdf_icon

BU508DXI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collec... See More ⇒

 8.2. Size:58K  philips

bu508dw.pdf pdf_icon

BU508DXI

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter vo... See More ⇒

Detailed specifications: BU508AFI, BU508AT, BU508AXI, BU508D, BU508DF, BU508DFI, BU508DR, BU508DRF, B772, BU508FI, BU508L, BU522, BU522A, BU522B, BU526, BU526A, BU526A-4

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