BU526A Specs and Replacement
Type Designator: BU526A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 86 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 460 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BU526A Substitution
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BU526A datasheet
isc Silicon NPN Power Transistor BU526A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 460V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT Colle... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU526 BU526A DESCRIPTION With TO-3 package Short switching times. High dielectric strength. APPLICATIONS For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ... See More ⇒
isc Silicon NPN Power Transistor BU526 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT Collec... See More ⇒
Detailed specifications: BU508DRF, BU508DXI, BU508FI, BU508L, BU522, BU522A, BU522B, BU526, TIP31, BU526A-4, BU526A-5, BU526A-6, BU526A-7, BU526A-8, BU536, BU546, BU603
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History: BU526A-5
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