BU608D Datasheet, Equivalent, Cross Reference Search
Type Designator: BU608D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BU608D Transistor Equivalent Substitute - Cross-Reference Search
BU608D Datasheet (PDF)
bu608d.pdf
isc Silicon NPN Power Transistor BU608DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 0.5s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIM
bu6084b.pdf
RBU6084B www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Computer aided power and Switch-mode power supplies 222FEATURES 2 Hi
bu6084bf.pdf
RBU6084BF www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Computer aided power and Switch-mode power supplies 222FEATURES 2 H
bu608.pdf
isc Silicon NPN Power Transistor BU608DESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 0.5s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMU
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
