BU706 Specs and Replacement

Type Designator: BU706

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TOP3

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BU706 datasheet

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BU706

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 0.1. Size:217K  inchange semiconductor

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BU706

isc Silicon NPN Power Transistor BU706D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications A... See More ⇒

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BU706

isc Silicon NPN Power Transistor BU706DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ... See More ⇒

 0.3. Size:242K  inchange semiconductor

 bu706f.pdf pdf_icon

BU706

isc Silicon NPN Power Transistor BU706F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

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Detailed specifications: BU608, BU608D, BU626, BU626A, BU705, BU705D, BU705DF, BU705F, NJW0281G, BU706D, BU706DF, BU706F, BU724, BU724A, BU724AS, BU726, BU800

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