BU806FI Datasheet, Equivalent, Cross Reference Search
Type Designator: BU806FI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220F
BU806FI Transistor Equivalent Substitute - Cross-Reference Search
BU806FI Datasheet (PDF)
bu806fi.pdf
isc Silicon NPN Darlington Power Transistor BU806FIDESCRIPTIONHigh voltageHigh switching speedLow saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis Darlington transistor is a high voltage ,high speeddevice for use in horizontal deflection circuits in TVsand CRTsABSOLU
bu806f.pdf
isc Silicon NPN Darlington Power Transistor BU806FDESCRIPTIONHigh voltageHigh switching speedLow saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis Darlington transistor is a high voltage ,high speeddevice for use in horizontal deflection circuits in TVsand CRTsABSOLUT
bu806rev.pdf
Order this documentMOTOROLAby BU806/DSEMICONDUCTOR TECHNICAL DATABU806NPN Darlington PowerTransistor8.0 AMPEREThis Darlington transistor is a high voltage, high speed device for use in horizontalDARLINGTONdeflection circuits in TVs and CRTs. NPN POWER High Voltage: VCEV = 330 or 400 VTRANSISTORS Fast Switching Speed:60 WATTStc = 1.0 s (max) 200 VO
bu806 bu807.pdf
BU806BU807MEDIUM VOLTAGE NPN FAST SWITCHINGDARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR32MONOCHROME TVs 1DESCRIPTION TO-220The devices are silicon Epitaxial Planar NPNpower transistors in Darlington configu
bu806-f.pdf
BU806/807High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and EmitterTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base V
bu806 bu807.pdf
BU806/807High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and EmitterTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base V
bu806 bu807.pdf
NPN EPITAXIALBU806/807 SILICON DARLINGTON TRANSISTORFAST SWITCHING DARLINGTONTO-220TRANSISTORHIGH VOLTAGE DARLINGTON TRANSISTORUSING IN HORIZONTAL OUTPUT STAGESOF 110 CTR VIDEO DISPLAYSBUILT-IN SPEED-UP Diode Between Base and EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage : BU806 VCBO 400 V1.Base 2.Collector 3.Emitter : BU807
bu806.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU806 DESCRIPTION High Voltage: VCEV= 400V(Min) Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS Designed for use in horizontal deflection circuits in TVs and CRTs. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Vol
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
