BU808DXI Specs and Replacement
Type Designator: BU808DXI
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 1400 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO220F
BU808DXI Substitution
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BU808DXI datasheet
BU808DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNT... See More ⇒
BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON WITH INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN U.L. RECOGNISED ISOWATT218 PACKAGE 3 (U.L. FILE # E81734 (N)) 2 LOW BASE-DRIVE REQUIREMENTS 1 COST AND SPACE SAVING. ISOWATT218 APPLICATIONS HORIZONTAL DE... See More ⇒
BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 LOW BASE-DRIVE REQUIREMENTS 2 DEDICATED APPLICATION NOTE AN1184 1 ... See More ⇒
Detailed specifications: BU806F, BU806FI, BU807, BU807F, BU807FI, BU808, 2SB647-C, BU808DFI, BD136, BU808FI, BU810, BU824, BU826, BU826A, BU902, BU902F, BU903
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