BU808DXI Datasheet, Equivalent, Cross Reference Search
Type Designator: BU808DXI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 1400 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220F
BU808DXI Transistor Equivalent Substitute - Cross-Reference Search
BU808DXI Datasheet (PDF)
bu808dfh.pdf
BU808DFHHIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON TRANSISTOR NEW Fully Plastic TO-220 for HIGHVOLTAGE APPLICATIONS NPN MONOLITHIC DARLINGTON WITHINTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNT
bu808df1.pdf
BU808DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON STMicroelectronics PREFERREDSALESTYPE NPN DARLINGTON WITH INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN U.L. RECOGNISED ISOWATT218 PACKAGE3(U.L. FILE # E81734 (N))2 LOW BASE-DRIVE REQUIREMENTS1 COST AND SPACE SAVING.ISOWATT218APPLICATIONS HORIZONTAL DE
bu808dfi.pdf
BU808DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN MONOLITHIC DARLINGTON WITHINTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING3 LOW BASE-DRIVE REQUIREMENTS2 DEDICATED APPLICATION NOTE AN11841
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
