BU902F Specs and Replacement

Type Designator: BU902F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 480 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 5.5

Noise Figure, dB: -

Package: ISOTOP3

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BU902F datasheet

 9.1. Size:214K  inchange semiconductor

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BU902F

isc Silicon NPN Power Transistor BU902 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 480V(Min.) (BR)CEO High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

Detailed specifications: BU808DFI, BU808DXI, BU808FI, BU810, BU824, BU826, BU826A, BU902, BD222, BU903, BU903F, BU908, BU908AF, BU910, BU911, BU912, BU920

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