BU921T Specs and Replacement

Type Designator: BU921T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 105 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO220

 BU921T Substitution

- BJT ⓘ Cross-Reference Search

 

BU921T datasheet

 ..1. Size:217K  inchange semiconductor

 bu921t.pdf pdf_icon

BU921T

isc Silicon NPN Darlington Power Transistor BU921T DESCRIPTION High Voltage Darlington Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage V = 0 450 V ... See More ⇒

 9.1. Size:216K  inchange semiconductor

 bu921pfi.pdf pdf_icon

BU921T

isc Silicon NPN Darlington Power Transistor BU921PFI DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage V = 0 450 V CES BE V Co... See More ⇒

 9.2. Size:217K  inchange semiconductor

 bu921p.pdf pdf_icon

BU921T

isc Silicon NPN Darlington Power Transistor BU921P DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage V = 0 450 V CES BE V Coll... See More ⇒

 9.3. Size:206K  inchange semiconductor

 bu921.pdf pdf_icon

BU921T

isc Silicon NPN Power Transistor BU921 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emi... See More ⇒

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Detailed specifications: BU912, BU920, BU920P, BU920PFI, BU920T, BU921, BU921P, BU921PFI, BC337, BU921TFI, BU921ZP, BU921ZPFI, BU921ZT, BU921ZTFI, BU922, BU922P, BU922PFI

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