BU930Z Specs and Replacement
Type Designator: BU930Z
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO3
BU930Z Substitution
- BJT ⓘ Cross-Reference Search
BU930Z datasheet
isc Silicon NPN Darlington Power Transistor BU930 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: BU921ZTFI, BU922, BU922P, BU922PFI, BU922T, BU926, BU930, BU930P, A1941, BU930ZP, BU931, BU931P, BU931PFI, BU931R, BU931RP, BU931RPFI, BU931SM
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