BUD616ASMD Datasheet and Replacement

   Type Designator: BUD616ASMD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 17
   Noise Figure, dB: -
   Package: TO252
     - BJT ⓘ Cross-Reference Search