All Transistors. BUF410FI Datasheet

 

BUF410FI Datasheet and Replacement


   Type Designator: BUF410FI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: ISOTOP
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BUF410FI Datasheet (PDF)

 8.1. Size:146K  st
buf410a.pdf pdf_icon

BUF410FI

BUF410AHigh voltage fast-switching NPN power transistorFeatures High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirementsApplications 321 Switch mode power suppliesTO-247 Motor control DescriptionThe BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram

 8.2. Size:69K  st
buf410.pdf pdf_icon

BUF410FI

BUF410HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS:3 SWITCH MODE POWER SUPPLIES2 MOTOR CONTROL1DESCRIPTIONTO-218The BUF410 is manufactured using High VoltageMulti Epitaxial Planar technolo

 8.3. Size:105K  inchange semiconductor
buf410a.pdf pdf_icon

BUF410FI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Vo

 8.4. Size:265K  inchange semiconductor
buf410.pdf pdf_icon

BUF410FI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Volt

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BF890 | 2SC1445 | 2SD2179 | FMMT5128 | 40362S | BLW83 | BFR10

Keywords - BUF410FI transistor datasheet

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