BUF653 Specs and Replacement

Type Designator: BUF653

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 11 V

Maximum Collector Current |Ic max|: 11 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

 BUF653 Substitution

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BUF653 datasheet

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Detailed specifications: BUF636A, BUF640, BUF640A, BUF642, BUF644, BUF646, BUF646A, BUF650, TIP122, BUF654, BUF660, BUF672, BUF725D, BUF742, BUF744, BUH100, BUH1015

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