BUH517 Datasheet and Replacement
Type Designator: BUH517
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: ISOWATT218
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BUH517 Datasheet (PDF)
buh517.pdf

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buh517.pdf

isc Silicon NPN Power Transistor BUH517DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers and monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
buh51rev.pdf

Order this documentMOTOROLAby BUH51/DSEMICONDUCTOR TECHNICAL DATABUH51Advance InformationPOWER TRANSISTOR3 AMPERESSWITCHMODE NPN Silicon800 VOLTSPlanar Power Transistor50 WATTSThe BUH51 has an application specific stateofart die designed for use in50 Watts Halogen electronic transformers.This power transistor is specifically designed to sustain the large inrush
buh515.pdf

BUH515HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTV AND MONITORS3 SWITCH MODE POWER SUPPLIES21ISOWATT218DESCRIPTIONThe BUH515 is manufactured using MultiepitaxialMesa technology for cost-effective highperformance and uses a Hollo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TI413 | KRA741U | D60T5050 | 3DD13007_Z8 | 2N753 | BUL58ASMD | ZXTP2012Z
Keywords - BUH517 transistor datasheet
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History: TI413 | KRA741U | D60T5050 | 3DD13007_Z8 | 2N753 | BUL58ASMD | ZXTP2012Z



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