All Transistors. BUL147F Datasheet

 

BUL147F Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUL147F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 14 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 14
   Noise Figure, dB: -
   Package: TO220F

 BUL147F Transistor Equivalent Substitute - Cross-Reference Search

   

BUL147F Datasheet (PDF)

 8.1. Size:376K  motorola
bul147re.pdf

BUL147F
BUL147F

Order this documentMOTOROLAby BUL147/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetBUL147*SWITCHMODEBUL147F*NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsPOWER TRANSISTORThe BUL147/BUL147F have an applications specific stateoftheart die designed8.0 AMPERESfor use in electric fluorescent lamp ballasts t

 8.2. Size:248K  onsemi
bul147-d.pdf

BUL147F
BUL147F

BUL147SWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe BUL147 have an applications specific state-of-the-art diehttp://onsemi.comdesigned for use in electric fluorescent lamp ballasts to 180 Watts andin Switchmode Power supplies for all types of electronic equipment.POWER TRANSISTORFeatures8.0 AMPERES, 700 VOLTS, Improved Efficiency Due

 9.1. Size:389K  motorola
bul146re.pdf

BUL147F
BUL147F

Order this documentMOTOROLAby BUL146/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetBUL146*SWITCHMODEBUL146F*NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsThe BUL146/BUL146F have an applications specific stateoftheart die designedPOWER TRANSISTORfor use in fluorescent electric lamp ballasts to 130 Watts a

 9.2. Size:199K  st
bul1403ed.pdf

BUL147F
BUL147F

BUL1403EDHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32 ARCING TEST SELF PROTECTED 1APPLICATIONS TO-220 2/4 LAMPS ELECTRONIC

 9.3. Size:61K  st
bul1403-.pdf

BUL147F
BUL147F

BUL1403ED HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION3 VERY HIGH SWITCHING SPEED2 ARCING TEST SELF PROTECTED1APPLICATIONSTO-220 2/4 LAMPS ELECTRONIC BAL

 9.4. Size:224K  onsemi
bul146g bul146fg.pdf

BUL147F
BUL147F

BUL146G, BUL146FGSWITCHMODEt NPNBipolar Power TransistorFor Switching Power Supply ApplicationsThe BUL146G / BUL146FG have an applications specificstate-of-the-art die designed for use in fluorescent electric lamphttp://onsemi.comballasts to 130 W and in Switchmode Power supplies for all types ofelectronic equipment.POWER TRANSISTORFeatures8.0 AMPERES Improved Efficie

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 3DD167D | BDY27

 

 
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