BUL52BFI Specs and Replacement

Type Designator: BUL52BFI

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 8 A

Electrical Characteristics

Noise Figure, dB: -

Package: TO220F

 BUL52BFI Substitution

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BUL52BFI datasheet

 8.1. Size:10K  semelab

 bul52bsmd.pdf pdf_icon

BUL52BFI

BUL52BSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 400V IC = 8A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (... See More ⇒

 8.2. Size:82K  jmnic

 bul52b.pdf pdf_icon

BUL52BFI

Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT V... See More ⇒

 8.3. Size:118K  inchange semiconductor

 bul52b.pdf pdf_icon

BUL52BFI

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL P... See More ⇒

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Detailed specifications: BUL50A, BUL50B, BUL510, BUL51A, BUL51B, BUL52A, BUL52AFI, BUL52B, 2SC2383, BUL53A, BUL53B, BUL54A, BUL54AFI, BUL54B, BUL54BFI, BUL55A, BUL55B

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