All Transistors. BUL52BFI Datasheet

 

BUL52BFI Datasheet and Replacement


   Type Designator: BUL52BFI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 8 A
   Noise Figure, dB: -
   Package: TO220F
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BUL52BFI Datasheet (PDF)

 8.1. Size:10K  semelab
bul52bsmd.pdf pdf_icon

BUL52BFI

BUL52BSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 8A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

 8.2. Size:82K  jmnic
bul52b.pdf pdf_icon

BUL52BFI

Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterLIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNITV

 8.3. Size:118K  inchange semiconductor
bul52b.pdf pdf_icon

BUL52BFI

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL P

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6317 | MCH3245 | RN1102 | 2N2836 | 2SD1428 | MRF5812 | 2N2351

Keywords - BUL52BFI transistor datasheet

 BUL52BFI cross reference
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