BUL52BFI Datasheet and Replacement
Type Designator: BUL52BFI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 8 A
Noise Figure, dB: -
Package: TO220F
BUL52BFI Substitution
BUL52BFI Datasheet (PDF)
bul52bsmd.pdf

BUL52BSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 8A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
bul52b.pdf

Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterLIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNITV
bul52b.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL P
Datasheet: BUL50A , BUL50B , BUL510 , BUL51A , BUL51B , BUL52A , BUL52AFI , BUL52B , 2SC828 , BUL53A , BUL53B , BUL54A , BUL54AFI , BUL54B , BUL54BFI , BUL55A , BUL55B .
History: CJD50 | KT6110B | MT0491 | CST1746 | TMPT2221 | 2SC805A | DTC115TN3
Keywords - BUL52BFI transistor datasheet
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History: CJD50 | KT6110B | MT0491 | CST1746 | TMPT2221 | 2SC805A | DTC115TN3



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