BUL56B Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL56B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 18 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO220
BUL56B Transistor Equivalent Substitute - Cross-Reference Search
BUL56B Datasheet (PDF)
bul56b.pdf
Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterLIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNITV
bul56b.pdf
isc Silicon NPN Power Transistor BUL56BDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 100V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.2V(Max) @ I = 1ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in electronic ballast applications.ABSOLUTE MAXIMUM RATING
bul56bsmd.pdf
BUL56BSMDNPNMECHANICAL DATAFAST SWITCHINGDimensions in mmTRANSISTOR FEATURES LOW SATURATION VOLTAGE ULTRA FAST TURNON AND TURNOFFSWITCHING (tr / tf = 40ns) APPLICATIONS High speed TO220 transistor suited for low voltage a
bul56asmd.pdf
BUL56ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 160V IC = 16A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
