BUL56B Specs and Replacement
Type Designator: BUL56B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 18 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO220
BUL56B Substitution
- BJT ⓘ Cross-Reference Search
BUL56B datasheet
Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT V... See More ⇒
isc Silicon NPN Power Transistor BUL56B DESCRIPTION Collector Emitter Sustaining Voltage V = 100V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.2V(Max) @ I = 1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATING... See More ⇒
BUL56BSMD NPN MECHANICAL DATA FAST SWITCHING Dimensions in mm TRANSISTOR FEATURES LOW SATURATION VOLTAGE ULTRA FAST TURN ON AND TURN OFF SWITCHING (tr / tf = 40ns) APPLICATIONS High speed TO220 transistor suited for low voltage a... See More ⇒
BUL56ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 160V IC = 16A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 ... See More ⇒
Detailed specifications: BUL53B, BUL54A, BUL54AFI, BUL54B, BUL54BFI, BUL55A, BUL55B, BUL56A, D882P, BUL57, BUL57A, BUL57PI, BUL58A, BUL58B, BUL58D, BUL59A, BUL67
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