All Transistors. BUL57PI Datasheet

 

BUL57PI Datasheet and Replacement


   Type Designator: BUL57PI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO220F
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BUL57PI Datasheet (PDF)

 9.1. Size:341K  semelab
 bul57an2a-b.pdf pdf_icon

BUL57PI

HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B High Voltage, High Current Hermetic Ceramic Surface Mount Package Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 200V VCEO Collector Emitter Volta

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MMBT3903 | 2N3153 | BC178C | 2N2869 | DTL1642 | 2SD682 | 3DD5G

Keywords - BUL57PI transistor datasheet

 BUL57PI cross reference
 BUL57PI equivalent finder
 BUL57PI lookup
 BUL57PI substitution
 BUL57PI replacement

 

 
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