All Transistors. BUL57PI Datasheet

 

BUL57PI Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUL57PI
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO220F

 BUL57PI Transistor Equivalent Substitute - Cross-Reference Search

   

BUL57PI Datasheet (PDF)

 9.1. Size:341K  semelab
 bul57an2a-b.pdf

BUL57PI BUL57PI

HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B High Voltage, High Current Hermetic Ceramic Surface Mount Package Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 200V VCEO Collector Emitter Volta

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BUL6821

 

 
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